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Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

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Resistive random access memory: introduction to device mechanism

Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

Resistive Random Access Memory (RRAM): an Overview of Materials

a) The switching characteristics of the N-doped and undoped RRAM

Schematic illustration of RS mechanism in the Al/a-SiNx:H/Si

a) The endurance and (b) the retention characteristics of the

Reliability and variability characteristics of the TaOx/HfO2